基本信息
出版地:UNITED STATES
期刊简称:IEEE T ELECTRON DEV
通讯地址:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
创刊年份:1954
发行周期:Monthly
涉及方向:工程技术 - 工程：电子与电气
ESSN:1557-9646
英文期刊简介
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
中文期刊简介
《Ieee Transactions On Electron Devices》是一本由IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC出版商出版的专业工程技术期刊，该刊创刊于1954年，刊期Monthly，该刊已被国际权威数据库SCIE、SCI收录。在中科院最新升级版分区表中，该刊分区信息为大类学科：工程技术 2区，小类学科：物理：应用 2区；工程：电子与电气 3区；在JCR（Journal Citation Reports）分区等级为Q2。该刊发文范围涵盖工程：电子与电气等领域，旨在及时、准确、全面地报道国内外工程：电子与电气工作者在该领域取得的最新研究成果、工作进展及学术动态、技术革新等，促进学术交流，鼓励学术创新。2021年影响因子为3.221，平均审稿速度约4.7个月。
